型号 MBT3946DW1T2G
厂商 ON Semiconductor
描述 TRANS GP DUAL 200MA 40V SOT-363
MBT3946DW1T2G PDF
代理商 MBT3946DW1T2G
产品变化通告 EDS Rating Update Standardized Format 15/June/2007
Wire Change 08/Jun/2009
标准包装 3,000
晶体管类型 NPN,PNP
电流 - 集电极 (Ic)(最大) 200mA
电压 - 集电极发射极击穿(最大) 40V
Ib、Ic条件下的Vce饱和度(最大) 300mV @ 5mA,50mA / 400mV @ 5mA,50mA
在某 Ic、Vce 时的最小直流电流增益 (hFE) 100 @ 10mA,1V
功率 - 最大 150mW
频率 - 转换 300MHz,250MHz
安装类型 表面贴装
封装/外壳 6-TSSOP,SC-88,SOT-363
供应商设备封装 SOT-363
包装 带卷 (TR)
其它名称 MBT3946DW1T2G-ND
MBT3946DW1T2GOSTR
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